Metal precursors for low temperature deposition and methods...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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Details

C438S102000, C438S237000, C438S198000, C438S381000, C257SE21335, C257SE21340, C257SE21459, C257SE21463

Reexamination Certificate

active

07867880

ABSTRACT:
The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

REFERENCES:
patent: 6117720 (2000-09-01), Harshfield
patent: 6791102 (2004-09-01), Johnson et al.
patent: 2007/0053786 (2007-03-01), Nonaka et al.
patent: 2009/0124039 (2009-05-01), Roeder et al.
patent: 2009/0305458 (2009-12-01), Hunks et al.
patent: 2005-117002 (2005-04-01), None
patent: 10-2004-0088938 (2003-04-01), None
patent: 10-2006-0008027 (2006-01-01), None
patent: 10-2006-0074236 (2006-07-01), None

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