Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-01-11
2011-01-11
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S102000, C438S237000, C438S198000, C438S381000, C257SE21335, C257SE21340, C257SE21459, C257SE21463
Reexamination Certificate
active
07867880
ABSTRACT:
The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
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Bae Byoung-jae
Cho Sung-lae
Lee Jin-il
Lim Ji-eun
Park Hye-young
Maldonado Julio J
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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