Metal plating method, pretreatment agent, and semiconductor...

Details Metal plating method, pretreatment agent, and semiconductor... Metal plating method, pretreatment agent, and semiconductor...

2006-05-16

2006-05-16

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C438S654000, C427S301000, C427S304000

Reexamination Certificate

active

07045461

ABSTRACT:
Resin cloths, powders, specular bodies and other objects resistant to conventional plating can be plated with metals by a simple method.According to the metal plating method of the present invention, electroless plating is performed after the surface of a object to be plated is treated with a pretreatment agent obtained by reacting or mixing in advance a noble metal compound (catalyst) with a silane-coupling agent having functional groups capable of capturing metals. According to this method, metal plating can be securely applied to powders, resin cloths, semiconductor wafers, and other specular bodies. Moreover, the problem of the insufficient coverage of the seed layer on the inside walls of vias and trenches during the formation of fine wiring can be addressed by applying this method to semiconductor wafers. The silane-coupling agent may be a compound containing azole groups, preferably an imidazole.

REFERENCES:
patent: 4986848 (1991-01-01), Yamamoto et al.
patent: 5258522 (1993-11-01), Tsuchida et al.
patent: 6197688 (2001-03-01), Simpson
patent: 2002/0192379 (2002-12-01), Imori
patent: 2 324 538 (1998-10-01), None
patent: 59-52701 (1984-12-01), None
patent: 60-181294 (1985-09-01), None
patent: 61-194183 (1986-08-01), None
patent: 63-227784 (1988-09-01), None
patent: 63-270474 (1988-11-01), None
patent: 1-117089 (1989-05-01), None
patent: 3-44149 (1991-07-01), None
patent: 6-256358 (1994-09-01), None
patent: 11-92482 (1999-04-01), None
patent: 11-288940 (1999-10-01), None

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