Metal oxide semiconductor transistors having a drain punch...

Details Metal oxide semiconductor transistors having a drain punch... Metal oxide semiconductor transistors having a drain punch...

2005-11-08

2005-11-08

Quach, T. N. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S362000, C257S497000, C438S197000, C438S303000, C438S479000, C438S586000

Reexamination Certificate

active

06963094

ABSTRACT:
Metal oxide semiconductor transistors and devices with such transistors and methods of fabricating such transistors and devices are provided. Such transistors may have a silicon well region having a first surface and having spaced apart source and drain regions therein. A gate insulator is provided on the first surface of the silicon well region and disposed between the source and drain regions and a gate electrode is provided on the gate insulator. A region of insulating material is disposed between a first surface of the drain region and the silicon well region. The region of insulating material extends toward but not to the source region. A source electrode is provided that contacts the source region. A drain electrode contacts the drain region and the region of insulating material.

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