Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-25
2009-02-24
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S682000, C257SE21421, C257SE21622
Reexamination Certificate
active
07494878
ABSTRACT:
A method of manufacturing a MOS transistor device. First, a semiconductor substrate having a gate structure is prepared. The gate structure has two sidewalls and a liner on the sidewalls. Subsequently, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure and the liner. Next, an activating process is performed. Furthermore, the stressed cap layer is etched to be a salicide block. Afterward, a salicide process is performed to form a silicide layer on the regions that are not covered by the stressed cap layer.
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Chen Neng-Kuo
Cheng Tzyy-Ming
Hsu Shao-Ta
Huang Cheng-Tung
Huang Chien-Chung
Hsu Winston
Lee Cheung
Lindsay, Jr. Walter L
United Microelectronics Corp.
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