Metal-oxide-semiconductor transistor and method of forming...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S200000, C438S586000, C438S597000, C438S620000

Reexamination Certificate

active

07547594

ABSTRACT:
A method of forming a metal-oxide-semiconductor (MOS) transistor device is provided. First, a semiconductor substrate is prepared. Subsequently, a gate structure is formed on the semiconductor substrate. The gate structure includes a first strip portion and a second strip portion that is not parallel to the first strip portion. The gate structure further includes a junction between the first strip portion and the second strip portion. Thereafter, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure. Next, a portion of the stressed cap layer is removed to expose the junction between the first strip portion and the second strip portion.

REFERENCES:
patent: 5405795 (1995-04-01), Beyer et al.
patent: 2003/0008450 (2003-01-01), Tsai et al.
patent: 2008/0153241 (2008-06-01), Hsu et al.

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