Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-08
2007-05-08
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S412000, C257S454000, C257S486000, C257S587000, C257SE21006, C257SE21151
Reexamination Certificate
active
11162693
ABSTRACT:
A method for forming a metal oxide semiconductor (MOS) transistor is provided. First, a gate structure is formed over a substrate. Then, offset spacers are formed on respective sidewalls of the gate structure. A first ion implantation process is performed to form a lightly doped drain (LDD) in the substrate beside the gate structure. Other spacers are formed on respective sidewalls of the offset spacers. Thereafter, a second ion implantation process is performed to form source/drain region in the substrate beside the spacers. Then, a metal silicide layer is formed on the surface of the source and the drain. An oxide layer is formed on the surface of the metal silicide layer. The spacers are removed and an etching stop layer is formed on the substrate. With the oxide layer over the metal silicide layer, the solvent for removing the spacers is prevented from damaging the metal silicide layer.
REFERENCES:
patent: 6124217 (2000-09-01), Sun et al.
patent: 2002/0192868 (2002-12-01), Kim
Chang Yu-Lan
Chen Ming-Tsung
Chiang Yi-Yiing
Huang Chang-Chi
Lee Chung-Ju
Andujar Leonardo
Jianq Chyun IP Office
United Microelectronics Corp.
Wilson Scott R.
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