Metal oxide semiconductor (MOS) transistors having buffer...

Details Metal oxide semiconductor (MOS) transistors having buffer... Metal oxide semiconductor (MOS) transistors having buffer...

2006-08-31

2009-06-02

Sefer, Ahmed (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S396000, C257S401000, C257S288000, C257SE29021, C257SE29275, C257SE29298, C438S197000

Reexamination Certificate

active

07541645

ABSTRACT:
A unit cell of a metal oxide semiconductor (MOS) transistor is provided including an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor has a source region, a drain region and a gate. The gate is between the source region and the drain region. First and second spaced apart buffer regions are provided beneath the source region and the drain region and between respective ones of the source region and integrated circuit substrate and the drain region and the integrated circuit substrate.

REFERENCES:
patent: 5270232 (1993-12-01), Kimura et al.
patent: 5418393 (1995-05-01), Hayden
patent: 5891763 (1999-04-01), Wanlass
patent: 6358800 (2002-03-01), Tseng
patent: 7148527 (2006-12-01), Kim et al.
patent: 2001/0045597 (2001-11-01), Nishinohara
patent: 2003/0082872 (2003-05-01), Leobandung
patent: 2004/0169221 (2004-09-01), Ko et al.
patent: 63-1602779 (1988-07-01), None
patent: 11-261068 (1999-09-01), None
“Notice to File Response to a Rejection,” from the Korean Intellectual Property Office, corresponding to Korean Patent Application No. 2002-02995, dated Sep. 13, 2004.

Affiliated with

Also associated with

Rating

Metal oxide semiconductor (MOS) transistors having buffer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide semiconductor (MOS) transistors having buffer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor (MOS) transistors having buffer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4107894