Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-12
2005-04-12
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S192000, C257S194000
Reexamination Certificate
active
06878593
ABSTRACT:
A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.
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Gaska Remigijus
Khan Muhammad Asif
Shur Michael
Yang Jinwei
Hoffman Warnick & D'Alessandro LLC
LaBatt, Esq. John W.
Le Thao P.
Nelms David
Sensor Electronic Technology, Inc.
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