Metal-oxide semiconductor field effect transistor device fabrica

Details Metal-oxide semiconductor field effect transistor device fabrica Metal-oxide semiconductor field effect transistor device fabrica

1998-04-07

1999-12-28

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438303, 438585, 430313, 430319, 430331, H01L 21336

Patent

active

060081007

ABSTRACT:
A method of fabricating a MOS FET is provided. An oxide layer and a polysilicon layer are successively formed on the semiconductor substrate. A pyramidical photoresist layer is used as a mask for forming a hat-shaped gate structure. A first ion implantation process is performed to form an LDD structure.

REFERENCES:
patent: 4394182 (1983-07-01), Maddox, III
patent: 5156986 (1992-10-01), Wei et al.
patent: 5830605 (1998-11-01), Umeki et al.
patent: 5830787 (1998-11-01), Kim

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