Metal oxide semiconductor field effect transistor and method of

Details Metal oxide semiconductor field effect transistor and method of Metal oxide semiconductor field effect transistor and method of

1997-05-16

1998-09-22

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438302, 438305, H01L 21336

Patent

active

058113401

ABSTRACT:
A MOSFET includes a semiconductor substrate of a first conductivity type including a field region and an active region; a gate insulating film on a portion of the active region, the gate insulating film having two edge parts and a mid-part, the two edge parts being thicker than the mid-part; a gate electrode on the gate insulating film; sidewall spacers on the sides of the gate electrode and the gate insulating film; heavily doped regions of a second conductivity type in the semiconductor substrate under the two edge parts of the gate insulating film; normally doped regions of the second conductivity type in the semiconductor substrate on both sides of the gate insulating film; lightly doped regions of the second conductivity type in the semiconductor substrate on the sides of the sidewall spacers; and doped regions of the first conductivity type below the normally doped region of the second conductivity type under the sidewall spacers.

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