Metal oxide semiconductor field effect transistor

Details Metal oxide semiconductor field effect transistor Metal oxide semiconductor field effect transistor

1995-10-23

1997-03-11

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257213, 257288, 257309, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056104243

ABSTRACT:
A metal oxide semiconductor field effect transistor having an increased channel length in a limited area of a highly integrated chip where a gate electrode is formed, and a method for fabricating the transistor. The transistor includes a semiconductor substrate having a protruded structure at a predetermined portion thereof, a gate oxide film surrounding the protruded structure of the semiconductor substrate, a polysilicon layer pattern for a gate electrode, the polysilicon layer pattern disposed over the gate oxide film, lightly doped drain regions formed in the semiconductor substrate respectively at opposite edges of the polysilicon layer pattern, and source and drain regions formed outward of the lightly doped drain regions in the semiconductor substrate respectively.

REFERENCES:
patent: 5089432 (1992-02-01), Yoo
patent: 5177027 (1993-01-01), Lowrey et al.
patent: 5262337 (1993-11-01), Kim
patent: 5403763 (1995-04-01), Yamazaki
patent: 5407848 (1995-04-01), Park et al.
patent: 5418398 (1995-05-01), Sardella et al.

Affiliated with

Also associated with

Rating

Metal oxide semiconductor field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide semiconductor field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-445338