Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S307000
Reexamination Certificate
active
06949781
ABSTRACT:
A metal-over-metal (MOM) device and the method for manufacturing same is provided. The device has at least one device cell on a first layer comprising a frame piece and a center piece surrounded by the frame piece. The center piece has a cross-shape center portion defining four quadrants of space between the frame and center pieces. The center piece has one or more center fingers each extending from at least one of the four ends thereof within a quadrant. The frame piece also has one or more frame fingers extending therefrom, each being in at least one quadrant and not being overlapped with the center finger in the same quadrant.
REFERENCES:
patent: 5208725 (1993-05-01), Akcasu
patent: 5583359 (1996-12-01), Ng et al.
patent: 6383858 (2002-05-01), Gupta et al.
patent: 2002/0093780 (2002-07-01), Hajimiri et al.
Chang Chung-Long
Chen Chun-Hon
Duane Morris LLP
Nguyen Dilinh
Pham Hoai
Taiwan Semiconductor Manufacturing Co. Ltd.
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