Metal nitride carbide deposition by ALD

Details Metal nitride carbide deposition by ALD Metal nitride carbide deposition by ALD

2005-11-22

2008-08-12

Talbot, Brian K (Department: 1792)

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

C427S096800, C427S098100, C427S255280, C427S394000, C438S643000, C438S653000, C438S678000, C438S687000

Reexamination Certificate

active

07410666

ABSTRACT:
The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

REFERENCES:
patent: 3708728 (1973-01-01), Sterling et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4565747 (1986-01-01), Nakae et al.
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 5281274 (1994-01-01), Yoder
patent: 5306666 (1994-04-01), Izumi
patent: 5316793 (1994-05-01), Wallace
patent: 5342652 (1994-08-01), Foster et al.
patent: 5382333 (1995-01-01), Ando et al.
patent: 5438028 (1995-08-01), Weissman et al.
patent: 5603771 (1997-02-01), Seiberras et al.
patent: 5691235 (1997-11-01), Meikle et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5723384 (1998-03-01), Park et al.
patent: 5744254 (1998-04-01), Kampe et al.
patent: 5789024 (1998-08-01), Levy et al.
patent: 5915004 (1999-06-01), Pabbati et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5939334 (1999-08-01), Nguyen et al.
patent: 5946598 (1999-08-01), Yeh
patent: 5964943 (1999-10-01), Stein et al.
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 6006763 (1999-12-01), Mori et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6143658 (2000-11-01), Donnelly et al.
patent: 6156382 (2000-12-01), Rajagopalan et al.
patent: 6162501 (2000-12-01), Kim et al.
patent: 6206967 (2001-03-01), Mak et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6380627 (2002-04-01), Weihs et al.
patent: 6541842 (2003-04-01), Meynen et al.
patent: 6921712 (2005-07-01), Soininen et al.
patent: 2003/0032281 (2003-02-01), Werkhoven et al.
patent: 2003/0049931 (2003-03-01), Byun et al.
patent: 2003/0104126 (2003-06-01), Fang et al.
patent: 2003/0123216 (2003-07-01), Yoon et al.
patent: 2003/0127043 (2003-07-01), Lu et al.
patent: 2003/0153181 (2003-08-01), Yoon et al.
patent: 2003/0157760 (2003-08-01), Xi et al.
patent: 2003/0161952 (2003-08-01), Wang et al.
patent: 2003/0181035 (2003-09-01), Yoon et al.
patent: 2003/0194825 (2003-10-01), Law et al.
patent: 2003/0203616 (2003-10-01), Chung et al.
patent: 0 387 403 (1989-10-01), None
patent: 0 394 054 (1990-04-01), None
patent: 0 442 490 (1991-08-01), None
patent: 0 573 033 (1993-06-01), None
patent: 0 774 533 (1996-10-01), None
patent: 0 899 779 (1999-03-01), None
patent: 1 167 567 (2002-02-01), None
patent: 6037041 (1994-02-01), None
patent: 7230957 (1995-08-01), None
patent: 8 264 530 (1996-10-01), None
patent: WO 96/17107 (1996-06-01), None
patent: WO 96/18756 (1996-06-01), None
patent: WO 98/51838 (1998-11-01), None
patent: WO 00/01006 (2000-01-01), None
patent: WO 00/47796 (2000-08-01), None
patent: WO 01/27347 (2001-04-01), None
patent: WO 01/28981 (2001-04-01), None
patent: WO 01/29280 (2001-04-01), None
patent: WO 01/29893 (2001-04-01), None
patent: WO 01/66832 (2001-09-01), None
patent: WO 01/78123 (2001-10-01), None
patent: WO 01/88972 (2001-11-01), None
“Kirk-Othmer Encyclopedia of Chemical Technology,” 4thEdition, vol. 4, John Wiley & Sons, Inc. pp. 841-878, (1992).
Bain et al., “Deposition of tungsten by plasma enhanced chemical vapour deposition,”J. Phys. IV France, vol. 9, pp. 827-833 (1999).
Elers et al., “NbC15 as a precursor in atomic layer epitaxy,”Applied Surface Science, 82/83:468-474 (1994).
Girolami et al., “Tailored Organometallics as Low-Temperature CVD Precursors to Thin Films,”Materials Research Society Symposium Proceedings, vol. 121, pp. 429-438, (1988).
Helmut Tulhoff et al., “Ullmann's Encyclopedia of Industrial Chemistry,” 5th, Completely Revised Edition, vol. A5, pp. 61-77, (1986).
Hermann Jehn, Gudrun Bär, Erich Best, and Ernst Koch, “Gmelin Handbook of Inorganic and Organometallic Chemistry,” 8thEdition, vol. A 5b, No. 54, pp. 131-154, (1993).
Hiltunen et al., “Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method,”Thin Solid Films, 166:149-154 (1988).
Jeon, H., “A Study on the Characteristics of TiN Thin Film Deposited by Atomic Layer Chemical Vapor Deposition Method,”AVS 46thInternational Symposium, Seattle, WA, abstract TF-MoP17 (1999).
Jeon, H., et al., “A Study on the Characteristics of TiN Thin Film Deposited by Atomic Layer Chemical Vapor Deposition Method,”J. Vac .Sci. Technol. A, 18(4), 1595-1598 (2000).
Juppo et al., “Deposition of copper films by an alternate supply of CuCl and Zn,”J. Vac. Sci. Technol A, vol. 15, No. 4, pp. 2330-2333, (Jul./Aug. 1997).
Klaus et al., “Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions,”Journal of the Electrochemical Society, vol. 147, No. 3, pp. 1175-1181, (2000).
Klaus et al.,“Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction,”Thin Solid Films, vol. 360, pp. 145-153, (2000).
Klaus, J.W., et al., “Atomic layer deposition of tungsten and tungsten nitride using sequential surface reactions,”AVS 46thInternational Symposium, Seattlhe, WA, abstract TF-TuM6 (1999).
Klaus, J.W., S.J. Ferro, and S.M. George, “Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions,”Applied Surface Science, vols. 162-163, pp. 479-491, (2000).
Lai, Ken K. and H. Henry Lamb, “Precursors for Organometallic Chemical Vapor Deposition of Tungsten Carbide Films,”Chem. Mater., vol. 7, pp. 2284-2292, (1995).
Ludviksson et al., “Low-Temperature Thermal CVD of Ti-Al Metal Films Using a Strong Reducing Agent,”Chem. Vap. Deposition, vol. 4, No. 4, pp. 129-132, (1998).
Martensson et al., “Atomic Layer Epitaxy of Copper and Tantalum,”Chemical Vapor Deposition, vol. 3, No. 1, pp. 45-50, (1997).
Martensson et al., “CU(THD)2As Copper Source in Atomic Layer Epitaxy,”Electrochemical Society Proceedings, vol. 97-25, pp. 1529-1536.
Martensson, “Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures,”J. Vac. Sci. Technol. B, vol. 17, No. 5, pp. 2122-2128, (Sep./Oct. 1999).
Min, Jae-Sik , Young Woong Son, Won-Gu Kang, Soung-Soon Chun, and Sang-Won Kang, “Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis (ethylmethylamino)-Titanium and Ammonia,”Jpn. J. Appl. Phys., vol. 37, pp. 4999-5004, (1998).
Min,Jae-Sik, Young-Woong Son, Won-Gu Kang, and Sang-Won Kang, “Atomic Layer Deposition of TiN Thin Films by Sequential Introduction of Ti Precursor and HN3,”Mat. Res. Soc. Symp. Proc., vol. 514, pp. 337-342, (1998).
Nakajima et al., “Chemical Vapor Deposition of Tungsten Carbide, Molybdenum Carbide Nitride, and Molybdenum Nitride Films,”J. Electrochem. Soc., vol. 144, No. 6, pp. 2096-2100, (Jun. 1997).
Polyakov et al., “Growth of GaBN Ternary Solutions by Organometallic Vapor Phase Epitaxy,”Journal of Electronic Materials, Vo. 26, No. 3, pp. 237-242, (1997).
Ritala et al., “Atomic layer epitaxy growth of TiN thin films,”J. Electrochem. Soc., 142(8):2731-2737 (1995).
Ritala, Mikko, Markku Leskelä, Eero Rauhala, and Janne Jokinen, “Atomic Layer Epitaxy Growth of TiN Thins Films from Til4and NH3,”J. Electrochem. Soc., vol. 145, No. 8, pp. 2914-2920, (Aug. 1998).
Sherman et al., “Plasma enhanced atomic layer deposition of Ta for diffusion barrier applications,” AVS

Affiliated with

Also associated with

Rating

Metal nitride carbide deposition by ALD does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal nitride carbide deposition by ALD, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal nitride carbide deposition by ALD will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4018940