Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-06-03
2008-03-04
Rose, Kiesha L. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000
Reexamination Certificate
active
07339271
ABSTRACT:
Described is a method and apparatus for forming interconnects with a metal-metal oxide electromigration barrier and etch-stop. In one embodiment of the invention, the method includes depositing a metal layer on the top of a planarized interconnect layer, the interconnect layer having an interlayer dielectric (ILD) with a top that is planar with the top of an electrically conductive interconnect. In one embodiment of the invention, the method includes reacting the metal layer with the ILD to form a metal oxide layer on the top of the ILD. At the same time, the metal layer will not be significantly oxidized by the electrically conductive interconnect, thus forming a metal barrier on the electrically conductive interconnect to improve electromigration performance. The metal barrier and metal oxide layer together comprise a protective layer. A second ILD may be subsequently formed on the protective layer, and the protective layer may act an etch-stop during a subsequent etch of the second ILD.
REFERENCES:
patent: 6093635 (2000-07-01), Tran et al.
patent: 6147000 (2000-11-01), You et al.
patent: 6153523 (2000-11-01), Van Ngo et al.
patent: 6160315 (2000-12-01), Chiang et al.
patent: 6165880 (2000-12-01), Yaung et al.
patent: 6188135 (2001-02-01), Chan et al.
patent: 6249055 (2001-06-01), Dubin
patent: 6261950 (2001-07-01), Tobben et al.
patent: 6277745 (2001-08-01), Liu et al.
patent: 6319819 (2001-11-01), Besser et al.
patent: 6444568 (2002-09-01), Sundararajan et al.
patent: 6800554 (2004-10-01), Marieb et al.
patent: 6974762 (2005-12-01), Gracias et al.
Patent Cooperation Treaty's Written Opinion for International application No. PCT/US03/28925, dated Jan. 5, 2005, 5 pgs.
Kuhn Markus
Leu Jihperng
Maiz Jose A.
Morrow Xiaorong
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Rose Kiesha L.
LandOfFree
Metal-metal oxide etch stop/barrier for integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal-metal oxide etch stop/barrier for integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-metal oxide etch stop/barrier for integrated circuit... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3980232