Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-05-27
2011-12-20
Ahmadi, Mohsen (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S524000, C438S628000, C438S637000, C438S643000, C438S653000, C257SE21165, C257SE21294, C257SE21584
Reexamination Certificate
active
08080472
ABSTRACT:
A metal line having a MoxSiy/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoxSiylayer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer.
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Jung Dong Ha
Kim Baek Mann
Kim Jae Hong
Lee Nam Yeal
Oh Joon Seok
Ahmadi Mohsen
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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