Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-14
2011-06-14
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000
Reexamination Certificate
active
07960273
ABSTRACT:
A method of manufacturing a metal interconnection of a semiconductor device includes forming a base layer with at least one groove, the at least one groove having an open upper portion, forming a first metal layer in the at least one groove, forming a seed metal layer on the first metal layer in the at least one groove, the seed metal layer being only on a bottom surface of the at least one groove, and forming a metal pattern grown from the seed metal layer to fill the at least one grove.
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Jo Cha-Je
Lee Kyu-Ha
Park Jeong-Woo
Lee & Morse P.C.
Richards N Drew
Samsung Electronics Co,. Ltd.
Withers Grant S
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