Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-31
2007-07-31
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S250000, C438S251000, C438S240000, C257SE21008, C257S351000
Reexamination Certificate
active
10909648
ABSTRACT:
A method (10) of forming a MIM (metal insulator metal) capacitor is disclosed whereby adverse affects associated with copper diffusion are mitigated even as the capacitor is scaled down. A sidewall spacer (156) is formed against an edge (137) of a layer of bottom electrode/copper diffusion barrier material (136), an edge (151) of a layer of capacitor dielectric material (150) and at least some of an edge (153) of a layer of top electrode material. The sidewall spacer (156) is dielectric or non-conductive and mitigates “shorting” currents that can develop between the plates as a result of copper diffusion. Bottom electrode diffusion barrier material (136) mitigates copper diffusion and/or copper drift, thereby reducing the likelihood of premature device failure.
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Brennan Kenneth D.
Crenshaw Darius L.
Lytle Steven A.
Papa Rao Satyavolu S.
Shichijo Hisashi
Brady III W. James
McLarty Peter K.
Sarkar Asok K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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