Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-20
2005-12-20
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S393000, C438S396000
Reexamination Certificate
active
06977198
ABSTRACT:
A metal-insulator-metal (MIM) capacitor includes a first metal plate; a first capacitor dielectric layer disposed on the first metal plate and a second metal plate stacked on the first capacitor dielectric layer. The first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor. A second capacitor dielectric layer is disposed on the second metal plate. A third metal plate is stacked on the second capacitor dielectric layer. The second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor. The first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor.
REFERENCES:
patent: 6066537 (2000-05-01), Poh
patent: 6232197 (2001-05-01), Tsai
patent: 6459117 (2002-10-01), Liou
patent: 6468858 (2002-10-01), Lou
patent: 6710425 (2004-03-01), Bothra
patent: 6777248 (2004-08-01), Nabatame et al.
patent: 6838717 (2005-01-01), Yen et al.
Hsu Winston
Tsai H. Jey
United Microelectronics Corp.
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