Metal-insulator-metal capacitor structure

Details Metal-insulator-metal capacitor structure Metal-insulator-metal capacitor structure

2008-05-29

2010-06-29

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S381000, C438S393000, C438S396000, C438S687000, C257SE21006, C257SE21008, C257SE21011, C257SE21582

Reexamination Certificate

active

07745280

ABSTRACT:
A metal-insulator-metal capacitor structure includes a lower electrode, a buffer layer, a barrier layer, a dielectric layer and an upper electrode. The lower electrode is disposed in the buffer layer. The barrier layer covers part of the lower electrode and is disposed between the lower electrode and the upper electrode. The buffer layer serves as an etching stop layer to define the dielectric layer. The dielectric layer in the metal-insulator-metal capacitor structure has a uniform and ideal thickness.

REFERENCES:
patent: 6699749 (2004-03-01), Lee
patent: 6730573 (2004-05-01), Ng
patent: 2006/0160299 (2006-07-01), Rao et al.
patent: 2007/0111431 (2007-05-01), Engelhardt et al.
patent: 2007/0145526 (2007-06-01), Kim

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