Metal-insulator-metal capacitor and method of fabricating...

Details Metal-insulator-metal capacitor and method of fabricating... Metal-insulator-metal capacitor and method of fabricating...

2005-12-23

2009-06-30

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S533000, C257S596000, C257SE27016, C257SE27019, C257SE27023, C257S313000

Reexamination Certificate

active

07554146

ABSTRACT:
In a metal-insulator-metal (MIM) capacitor and a method of fabricating the MIM capacitor, a metal-insulator-metal (MIM) capacitor comprises: a lower electrode pattern which is formed on a substrate and includes a conductive layer having a portion as a lower interconnect; a dielectric layer on the lower electrode pattern; a first upper electrode pattern on the dielectric layer; an interlayer insulating layer which covers the first upper electrode pattern, the dielectric layer, and the lower electrode pattern and has a planarized upper surface; a second upper electrode opening pattern formed in the interlayer insulating layer to expose the first upper electrode pattern; a second upper electrode which fills the opening pattern and has an upper surface that is substantially level with an upper surface of the interlayer insulating layer; and an upper interconnect on the interlayer insulating layer and contacts the second upper electrode.

REFERENCES:
patent: 2004/0135186 (2004-07-01), Yamamoto
patent: 2005/0006771 (2005-01-01), Akiyama
patent: 10-2004-0011245 (2004-02-01), None
patent: 10-20040032333 (2004-04-01), None

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