Metal-insulator-metal capacitor and fabrication method thereof

Details Metal-insulator-metal capacitor and fabrication method thereof Metal-insulator-metal capacitor and fabrication method thereof

2011-03-01

2011-03-01

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S250000, C438S254000, C438S386000, C438S422000, C257S528000, C257S532000, C257SE21009, C257SE21011, C257SE21582, C257SE27048

Reexamination Certificate

active

07897454

ABSTRACT:
The present invention provides a metal-insulator-metal capacitor, which comprises a semiconductor substrate; an interlayer dielectric layer disposed on the semiconductor substrate; and an insulation trench and two metal trenches all running through the interlayer dielectric layer and allowing the semiconductor substrate to be exposed; wherein the metal trenches being located on each side of the insulation trench and sharing a trench wall with the insulation trench respectively, the insulation trench being filled with insulation material as an insulation structure, the metal trenches being filled with metal material as electrodes of the capacitor.

REFERENCES:
patent: 6624040 (2003-09-01), Ng et al.
patent: 7195974 (2007-03-01), Hayashi
patent: 2003/0113967 (2003-06-01), Allman et al.
patent: 2005/0024979 (2005-02-01), Kim et al.
patent: 2007/0146963 (2007-06-01), Go
patent: 2004-259827 (2004-09-01), None

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