Metal high dielectric constant transistor with reverse-T gate

Details Metal high dielectric constant transistor with reverse-T gate Metal high dielectric constant transistor with reverse-T gate

2008-05-01

2010-06-15

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C438S585000, C438S592000, C257S340000, C257S401000, C257S412000

Reexamination Certificate

active

07736981

ABSTRACT:
A transistor is provided. The transistor includes a silicon layer including a source region and a drain region. A gate stack is disposed on the silicon layer between the source region and the drain region. The gate stack comprises a first layer of a high dielectric constant material, a second layer comprising a metal or metal alloy, and a third layer comprising silicon or polysilicon. A lateral extent of the second layer of the gate stack is substantially greater than a lateral extent of the third layer of the gate stack. Also provided are methods for fabricating such a transistor.

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