Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
Reexamination Certificate
2007-04-24
2007-04-24
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Forming schottky junction
Using platinum group metal
C438S583000, C257SE21199
Reexamination Certificate
active
10903805
ABSTRACT:
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, halogen atoms (120) and transition metal atoms (130) to form a halogen-containing metal layer (140) on a semiconductor substrate (150). The halogen-containing metal layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400) comprising the metal silicide electrode.
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Chen Peijun J.
Mercer Douglas E.
Russell Noel
Yue Duofeng
Brady III W. James
Kebede Brook
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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