Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2004-07-30
2008-10-14
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S652000
Reexamination Certificate
active
07435672
ABSTRACT:
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
REFERENCES:
patent: 6787864 (2004-09-01), Paton et al.
Chen Peijun J.
Mercer Douglas E.
Russell Noel
Yue Doufeng
Brady III Wade J.
Chen Jack
Telecky Jr Frederick J.
Texas Instruments Incorporated
LandOfFree
Metal-germanium physical vapor deposition for semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal-germanium physical vapor deposition for semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-germanium physical vapor deposition for semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4006054