Metal gate transistor CMOS process and method for making

Details Metal gate transistor CMOS process and method for making Metal gate transistor CMOS process and method for making

2006-09-19

2006-09-19

Malsawma, Lex H. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C257S369000

Reexamination Certificate

active

07109079

ABSTRACT:
A method for forming a semiconductor device (100) includes a semiconductor substrate (102) having a first region (104), forming a gate dielectric (108) over the first region, forming a conductive metal oxide (110) over the gate dielectric, forming an oxidation resistant barrier layer (111) over the conductive metal oxide, and forming a capping layer over the oxidation resistant barrier layer. In one embodiment, the conductive metal oxide is IrO2, MoO2, and RuO2, and the oxidation resistant barrier layer includes TiN.

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Rhee et al., “A New Double-Layered Structure for Mass-Production-Worthy CMOSFETs with Poly-siGe Gate,” IEEE 2002 Symposium On VLSI Technology Digest of Technical Papers, pp. 126-127.

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