Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-26
2011-04-26
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S155000, C438S382000, C257S379000, C257S380000, C257S538000
Reexamination Certificate
active
07932146
ABSTRACT:
A method for fabricating metal gate transistors and a polysilicon resistor is disclosed. First, a substrate having a transistor region and a resistor region is provided. A polysilicon layer is then formed on the substrate to cover the transistor region and the resistor region of the substrate. Next, a portion of the polysilicon layer disposed in the resistor is removed, and the remaining polysilicon layer is patterned to create a step height between the surface of the polysilicon layer disposed in the transistor region and the surface of the polysilicon layer disposed in the resistor region.
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Chen Yi-Wen
Cheng Li-Wei
Chiang Tian-Fu
Chou Cheng-Hsien
Hsu Che-Hua
Hsu Winston
Margo Scott
Picardat Kevin M
United Microelectronics Corp.
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