Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-01-18
2005-01-18
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C257S775000, C438S627000, C438S638000, C438S639000, C438S640000
Reexamination Certificate
active
06844627
ABSTRACT:
A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insulation film including nitrogen, forming a second metal film on a portion of the metal barrier layer in the recess, and forming a third metal film on the substrate, the recess and the insulation film.
REFERENCES:
patent: 5552341 (1996-09-01), Lee
patent: 6518648 (2003-02-01), Lopatin
patent: 6570252 (2003-05-01), Sandhu et al.
patent: 6617689 (2003-09-01), Honeycutt
patent: 6624516 (2003-09-01), Fujisawa et al.
patent: 6639319 (2003-10-01), Trivedi et al.
patent: 6649465 (2003-11-01), Iijima et al.
patent: 6674170 (2004-01-01), Ngo et al.
patent: 6693356 (2004-02-01), Jiang et al.
patent: 57-181172 (1982-11-01), None
patent: 2001168101 (2001-06-01), None
patent: 1999017335 (1999-03-01), None
patent: 1999-017335 (1999-03-01), None
patent: 20010073825 (2001-08-01), None
Korean Office Action Dated Apr. 28, 2004.
Chun Jong-Sik
Lee Jong-Myeong
Park In-Sun
Clark Jasmine
Harness Dickey
Samsung Electronics Co,. Ltd.
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