Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-03
2007-04-03
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S633000, C438S638000, C438S692000, C257SE21585
Reexamination Certificate
active
10854061
ABSTRACT:
A method of forming a metal-filled opening in a semiconductor or other submicron device substrate includes forming a conductive bulk layer over the substrate surface and in the opening, wherein the conductive bulk layer has a first grain size. A conductive cap layer is formed over the conductive bulk layer, the conductive cap layer having a second grain size that is substantially smaller than the first grain size. At least one of the conductive bulk and cap layers are then planarized to form a planar surface that is substantially coincident with the substrate surface.
REFERENCES:
patent: 5731245 (1998-03-01), Joshi et al.
patent: 6010962 (2000-01-01), Liu et al.
patent: 6017803 (2000-01-01), Wong
patent: 6093656 (2000-07-01), Lin
patent: 6110648 (2000-08-01), Jang
patent: 6117783 (2000-09-01), Small et al.
patent: 6162728 (2000-12-01), Tsao et al.
patent: 6225223 (2001-05-01), Liu et al.
patent: 6350694 (2002-02-01), Chang et al.
patent: 6372632 (2002-04-01), Yu et al.
patent: 6376376 (2002-04-01), Lim et al.
patent: 6391780 (2002-05-01), Shih et al.
patent: 6444405 (2002-09-01), Furukawa et al.
patent: 6461225 (2002-10-01), Misra et al.
patent: 6492273 (2002-12-01), Hofmann et al.
patent: 6503827 (2003-01-01), Bombardier et al.
patent: 6517668 (2003-02-01), Agarwal
patent: 6520840 (2003-02-01), Wang et al.
patent: 6524950 (2003-02-01), Lin
patent: 6530968 (2003-03-01), Tsuchiya et al.
patent: 6531386 (2003-03-01), Lim et al.
patent: 2002/0192941 (2002-12-01), Hsu et al.
patent: 2003/0129828 (2003-07-01), Cohen
Chang Shih Tzung
Chen Kei Wei
Liu Chi Wen
Tsao Jung Chih
Wang Ying Lang
Haynes and Boone LLP
Lee Cheung
Lindsay, Jr. Walter
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Metal-filled openings for submicron devices and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal-filled openings for submicron devices and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-filled openings for submicron devices and methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3756823