Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2007-01-11
2010-02-23
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
Reexamination Certificate
active
07666753
ABSTRACT:
The embodiments of the invention provide a metal capping process for a BEOL interconnect with air gaps. More specifically an apparatus is provided comprising metal lines within a first dielectric. Metal caps are over the metal lines, wherein the metal caps contact the metal lines. In addition, air gaps are between the metal lines, wherein the air gaps are between the metal caps. A second dielectric is also provided over the bottom portion of a first dielectric, wherein a top portion of the second dielectric is over the metal caps, and wherein top portions of the first dielectric and bottom portions of the second dielectric comprise sides of the air gap. The apparatus further includes dielectric caps over the metal lines, wherein the dielectric caps contact the metal caps.
REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 6358832 (2002-03-01), Edelstein et al.
patent: 2006/0088975 (2006-04-01), Ueda
patent: 2007/0063348 (2007-03-01), Yang et al.
Bonilla Griselda
Chen Shyng-Tsong
Colburn Matthew E.
Yang Chih-Chao
Brown, Esq. Katherine S.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Wagner Jenny L
Zarneke David A
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