Metal capping process for BEOL interconnect with air gaps

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric

Reexamination Certificate

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Reexamination Certificate

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07666753

ABSTRACT:
The embodiments of the invention provide a metal capping process for a BEOL interconnect with air gaps. More specifically an apparatus is provided comprising metal lines within a first dielectric. Metal caps are over the metal lines, wherein the metal caps contact the metal lines. In addition, air gaps are between the metal lines, wherein the air gaps are between the metal caps. A second dielectric is also provided over the bottom portion of a first dielectric, wherein a top portion of the second dielectric is over the metal caps, and wherein top portions of the first dielectric and bottom portions of the second dielectric comprise sides of the air gap. The apparatus further includes dielectric caps over the metal lines, wherein the dielectric caps contact the metal caps.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 6358832 (2002-03-01), Edelstein et al.
patent: 2006/0088975 (2006-04-01), Ueda
patent: 2007/0063348 (2007-03-01), Yang et al.

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