Metal bridging monitor for etch and CMP endpoint detection

Details Metal bridging monitor for etch and CMP endpoint detection Metal bridging monitor for etch and CMP endpoint detection

2006-03-14

2006-03-14

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S059000, C216S084000, C216S086000, C438S014000, C438S017000

Reexamination Certificate

active

07011762

ABSTRACT:
One aspect of the present invention relates to a wafer containing a semiconductor substrate, at least one metal layer formed over the semiconductor substrate, and at least one electrical sensor embedded at least one of on and in the wafer to facilitate real time monitoring of the metal layer as it progresses through a subtractive metallization process. Another aspect of the present relates to a system and method for monitoring a subtractive metallization process in real time in order to effectuate an immediate response in the on-going process. The system contains a wafer comprising at least one metal layer formed on a semiconductor substrate, at least one electrical sensor in contact with the wafer and operable to detect and transmit electrical activity associated with the wafer, and an electrical measurement station operable to process electrical activity detected and received from the electrical sensor for monitoring a subtractive metallization process in real-time.

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