Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-10
2007-04-10
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C257SE21320, C257SE21561
Reexamination Certificate
active
10882208
ABSTRACT:
Silicon-on-insulator (SOI) structures with silicon layers less than 20 nm in thickness are used to form extremely thin silicon-on-insulator (ETSOI) semiconductor devices. ETSOI semiconductor devices can be efficiently manufactured by mesa isolation techniques. A method of forming a plurality of semiconductor devices is provided comprising a SOI structure. The SOI structure comprises a substrate, an insulating layer overlying the substrate, and a silicon layer overlying the insulating layer, wherein the silicon layer has a thickness less than 20 nm. The silicon layer is patterned to create at least two laterally spaced apart silicon layers. A semiconductor device is formed at each of the at least two laterally spaced apart silicon layers.
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Advanced Micro Devices , Inc.
Kebede Brook
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