Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-13
2009-10-27
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S302000, C257SE21646, C438S259000
Reexamination Certificate
active
07608876
ABSTRACT:
A high density vertical merged MOS-bipolar-capacitor gain cell is realized for DRAM operation. The gain cell includes a vertical MOS transistor having a source region, a drain region, and a floating body region therebetween. The gain cell includes a vertical bi-polar transistor having an emitter region, a base region and a collector region. The base region for the vertical bi-polar transistor serves as the source region for the vertical MOS transistor. A gate opposes the floating body region and is separated therefrom by a gate oxide on a first side of the vertical MOS transistor. A floating body back gate opposes the floating body region on a second side of the vertical transistor. The base region for the vertical bi-polar transistor is coupled to a write data word line.
REFERENCES:
patent: 4130892 (1978-12-01), Gunckel et al.
patent: 4826780 (1989-05-01), Takemoto et al.
patent: 4970689 (1990-11-01), Kenney
patent: 4999811 (1991-03-01), Banerjee
patent: 5006909 (1991-04-01), Kosa
patent: 5017504 (1991-05-01), Nishimura et al.
patent: 5021355 (1991-06-01), Dhong et al.
patent: 5028977 (1991-07-01), Kenneth et al.
patent: 5042011 (1991-08-01), Casper et al.
patent: 5066607 (1991-11-01), Banerjee
patent: 5078798 (1992-01-01), Nicolson et al.
patent: 5122986 (1992-06-01), Lim et al.
patent: 5220530 (1993-06-01), Itoh
patent: 5280205 (1994-01-01), Green et al.
patent: 5291438 (1994-03-01), Witek et al.
patent: 5308783 (1994-05-01), Krautschneider et al.
patent: 5329481 (1994-07-01), Seevinck et al.
patent: 5378914 (1995-01-01), Ohzu et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5385853 (1995-01-01), Mohammad
patent: 5414288 (1995-05-01), Fitch et al.
patent: 5448513 (1995-09-01), Hu et al.
patent: 5478772 (1995-12-01), Fazan
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5519236 (1996-05-01), Ozaki
patent: 5574299 (1996-11-01), Kim
patent: 5627785 (1997-05-01), Gilliam et al.
patent: 5707885 (1998-01-01), Lim
patent: 5719409 (1998-02-01), Singh et al.
patent: 5732014 (1998-03-01), Forbes
patent: 5793686 (1998-08-01), Furutani et al.
patent: 5815432 (1998-09-01), Naffziger et al.
patent: 5828263 (1998-10-01), Gantioler et al.
patent: 5854500 (1998-12-01), Krautschneider
patent: 5897351 (1999-04-01), Forbes
patent: 5909618 (1999-06-01), Forbes et al.
patent: 5936274 (1999-08-01), Forbes et al.
patent: 5937296 (1999-08-01), Arnold
patent: 5959327 (1999-09-01), Sandhu et al.
patent: 5966319 (1999-10-01), Sato
patent: 5973356 (1999-10-01), Noble et al.
patent: 5991225 (1999-11-01), Forbes et al.
patent: 5995419 (1999-11-01), Trimberger
patent: 5998820 (1999-12-01), Chi et al.
patent: 5999442 (1999-12-01), Van Der Sanden et al.
patent: 5999455 (1999-12-01), Lin et al.
patent: 6030847 (2000-02-01), Fazan et al.
patent: 6031263 (2000-02-01), Forbes et al.
patent: 6072209 (2000-06-01), Noble et al.
patent: 6077745 (2000-06-01), Burns, Jr. et al.
patent: 6097065 (2000-08-01), Forbes et al.
patent: 6104061 (2000-08-01), Forbes et al.
patent: 6111286 (2000-08-01), Chi et al.
patent: 6124729 (2000-09-01), Noble et al.
patent: 6141238 (2000-10-01), Forbes et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6150687 (2000-11-01), Noble et al.
patent: 6153468 (2000-11-01), Forbes et al.
patent: 6172390 (2001-01-01), Rupp et al.
patent: 6172901 (2001-01-01), Portacci
patent: 6191448 (2001-02-01), Forbes et al.
patent: 6204115 (2001-03-01), Cho
patent: 6213869 (2001-04-01), Yu et al.
patent: 6238976 (2001-05-01), Noble et al.
patent: 6246083 (2001-06-01), Noble
patent: 6249020 (2001-06-01), Forbes et al.
patent: 6249460 (2001-06-01), Forbes et al.
patent: 6282115 (2001-08-01), Furukawa et al.
patent: 6307775 (2001-10-01), Forbes et al.
patent: 6316309 (2001-11-01), Holmes et al.
patent: 6350635 (2002-02-01), Noble et al.
patent: 6384448 (2002-05-01), Forbes
patent: 6399979 (2002-06-01), Noble et al.
patent: 6440801 (2002-08-01), Furukawa et al.
patent: 6456535 (2002-09-01), Forbes et al.
patent: 6492233 (2002-12-01), Forbes et al.
patent: 6501116 (2002-12-01), Kisu et al.
patent: 6504201 (2003-01-01), Noble et al.
patent: 6531730 (2003-03-01), Sandhu et al.
patent: 6538916 (2003-03-01), Ohsawa
patent: 6549453 (2003-04-01), Wong
patent: 6556471 (2003-04-01), Chappell et al.
patent: 6560139 (2003-05-01), Ma et al.
patent: 6566682 (2003-05-01), Forbes
patent: 6611451 (2003-08-01), Houston
patent: 6624033 (2003-09-01), Noble
patent: 6625057 (2003-09-01), Iwata
patent: 6661042 (2003-12-01), Hsu
patent: 6680864 (2004-01-01), Noble
patent: 6686624 (2004-02-01), Hsu
patent: 6710465 (2004-03-01), Song et al.
patent: 6727141 (2004-04-01), Bronner et al.
patent: 6747314 (2004-06-01), Sundaresan et al.
patent: 6750095 (2004-06-01), Bertagnoll et al.
patent: 6781197 (2004-08-01), Fujishima et al.
patent: 6838723 (2005-01-01), Forbes
patent: 6940761 (2005-09-01), Forbes
patent: 6943083 (2005-09-01), Forbes
patent: 6956256 (2005-10-01), Forbes
patent: 6975531 (2005-12-01), Forbes
patent: 7030436 (2006-04-01), Forbes
patent: 7149109 (2006-12-01), Forbes
patent: 7151690 (2006-12-01), Forbes
patent: 7199417 (2007-04-01), Forbes
patent: 7224024 (2007-05-01), Forbes
patent: 7241658 (2007-07-01), Forbes
patent: 7298638 (2007-11-01), Forbes
patent: 7323380 (2008-01-01), Forbes
patent: 2001/0028078 (2001-10-01), Noble
patent: 2001/0030338 (2001-10-01), Noble
patent: 2001/0032997 (2001-10-01), Forbes et al.
patent: 2001/0044188 (2001-11-01), Heo et al.
patent: 2001/0053096 (2001-12-01), Forbes et al.
patent: 2002/0098639 (2002-07-01), Kisu et al.
patent: 2002/0126536 (2002-09-01), Forbes et al.
patent: 2003/0001191 (2003-01-01), Forbes et al.
patent: 2003/0129001 (2003-07-01), Kisu et al.
patent: 2003/0155604 (2003-08-01), Sandhu et al.
patent: 2003/0205754 (2003-11-01), Forbes et al.
patent: 2004/0041236 (2004-03-01), Forbes
patent: 2005/0012130 (2005-01-01), Forbes
patent: 2005/0024936 (2005-02-01), Forbes
patent: 2005/0032313 (2005-02-01), Forbes
patent: 2005/0041457 (2005-02-01), Forbes
patent: 2005/0068828 (2005-03-01), Forbes
patent: 2005/0094453 (2005-05-01), Forbes
patent: 2005/0265069 (2005-12-01), Forbes
patent: 2006/0028859 (2006-02-01), Forbes
patent: 2006/0181919 (2006-08-01), Forbes
patent: 2006/0231879 (2006-10-01), Forbes
patent: 2006/0252206 (2006-11-01), Forbes
patent: 2007/0158722 (2007-07-01), Forbes
patent: 61-140170 (1986-06-01), None
patent: 5226661 (1993-09-01), None
U.S. Appl. No.10/230,929 Notice of allowance mailed Apr. 30, 2004, 2 pgs.
U.S. Appl. No. 10/230,929 Response filed Jan. 1, 2008 to non-final office action mailed Oct. 8, 2003, 12 pgs.
U.S. Appl. No. 10/231,397 non-final office action mailed Jun. 23, 2006, 7 pgs.
U.S. Appl. No. 10/231,397 Notice of allowance mailed Mar. 4, 2005, 4 pgs.
U.S. Appl. No. 10/292,080 Notice of allowance mailed Jun. 17, 2003, 2 pgs.
U.S. Appl. No. 10/309,873 non-final office action mailed Mar. 8, 2004, 4 pgs.
U.S. Appl. No. 10/309,873 non-final office action mailed Jul. 30, 2003, 5 pgs.
U.S. Appl. No.10/309,873 non-final office action mailed Aug. 19, 2003, 5 pgs.
U.S. Appl. No.10/309,873 Notice of allowance mailed Nov. 4, 2005, 4 pgs.
U.S. Appl. No. 10/309,873 Notice of allowance mailed May 4, 2005, 4 pgs.
U.S. Appl. No. 10/309,873 Response filed Nov. 19, 2003 to non-final office action mailed Aug. 19, 2003, 13 pgs.
U.S. Appl. No. 10/309,873 Response filed Jun. 8, 2004 to non-final office action mailed Mar. 8, 2004, 12 pgs.
U.S. Appl. No. 10/379,478 Amendment under 37 C.F.R. filed Mar. 7, 2005, 8 pgs.
U.S. Appl. No. 10/379,478 Notice of allowance mailed Dec. 13, 2004, 4 pgs.
U.S. Appl. No. 10/379,478 Notice of allowance mailed Jul. 14, 2004, 5 pgs.
U.S. Appl. No. 10/909,480 Amendment under 37 C.F.R. filed Sep. 21, 2005, 11 pgs.
U.S. Appl. No. 10/909,480 non-final office action mailed Oct. 22, 2004, 6 pgs.
U.S. Appl. No. 10/909,480 non-final office action mailed Feb. 28, 2005, 4 pgs.
U.S. Appl. No. 10/909,480 Notice of allowance mailed Jun. 24, 2005, 2 pgs.
U.S. Appl. No.10/909,480 Response filed Jan. 17, 2005 to non-final office action mailed Oct. 22, 2004, 16 pgs.
U.S. Appl. No. 10/909,480 Response filed May 31, 2005 to non-final off
Micro)n Technology, Inc.
Nguyen Thinh T
Schwegman Lundberg & Woessner, P.A.
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