Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2006-06-22
2009-11-17
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S181000, C257S416000, C310S343000, C310S344000
Reexamination Certificate
active
07619289
ABSTRACT:
A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.
REFERENCES:
patent: 7038355 (2006-05-01), Bouche et al.
patent: 2004/0157367 (2004-08-01), Wong et al.
patent: 2005/0146241 (2005-07-01), Wan
Hong Young-tack
Jeong Hee-moon
Kim Che-heung
Kim Duck-hwan
Kim Jong-seok
Diaz José R
Parker Kenneth A
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
LandOfFree
MEMS switch and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MEMS switch and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MEMS switch and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4103239