MEMS structure with suspended microstructure that includes...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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C257SE29324

Reexamination Certificate

active

07960805

ABSTRACT:
An MEMS structure and a method of manufacturing the same are provided. The MEMS structure includes a substrate and at least one suspended microstructure located on the substrate. The suspended microstructure includes a plurality of metal layers, at least one dielectric layer, and at least one peripheral metal wall. The dielectric layer is sandwiched by the metal layers, and the peripheral metal wall is parallel to a thickness direction of the suspended microstructure and surrounds an edge of the dielectric layer.

REFERENCES:
patent: 5717631 (1998-02-01), Carley et al.
patent: 5760455 (1998-06-01), Hierold et al.
patent: 5970315 (1999-10-01), Carley et al.
patent: 6943448 (2005-09-01), Gabriel et al.
patent: 7202101 (2007-04-01), Gabriel et al.
patent: 7829365 (2010-11-01), Nakamura
patent: 2010/0052179 (2010-03-01), Lan et al.

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