Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-06-14
2011-06-14
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257SE29324
Reexamination Certificate
active
07960805
ABSTRACT:
An MEMS structure and a method of manufacturing the same are provided. The MEMS structure includes a substrate and at least one suspended microstructure located on the substrate. The suspended microstructure includes a plurality of metal layers, at least one dielectric layer, and at least one peripheral metal wall. The dielectric layer is sandwiched by the metal layers, and the peripheral metal wall is parallel to a thickness direction of the suspended microstructure and surrounds an edge of the dielectric layer.
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Chen Jen-Yi
Wang Chin-Horng
Industrial Technology Research Institute
Jianq Chyun IP Office
Smoot Stephen W
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