Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2009-06-16
2011-10-18
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S419000, C257S420000, C257SE21002, C257SE21704, C257SE29324, C438S053000, C381S174000, C381S176000
Reexamination Certificate
active
08039911
ABSTRACT:
The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1):in-line-formulae description="In-line Formulae" end="lead"?(A2/A1)/(B2/B1)≧1 (1)in-line-formulae description="In-line Formulae" end="tail"?A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragmA1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragmB2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragmB1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure.
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Nakatani Goro
Okada Mizuho
Yamashita Nobuhisa
Pert Evan
Rabin & Berdo PC
Rohm & Co., Ltd.
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