Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2006-04-25
2006-04-25
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S417000, C257S418000, C257S500000, C257S415000, C257S416000, C257S419000, C257S420000, C235S454000, C235S462360, C310S309000, C359S290000, C359S291000, C359S224200, C438S052000, C385S017000
Reexamination Certificate
active
07034370
ABSTRACT:
In one embodiment of the invention, a MEMS structure includes a first electrode, a second electrode, and a mobile element. The first electrode is coupled to a first voltage source. The second electrode is coupled to a second voltage source. The mobile element includes a third electrode coupled to a third voltage source. A steady voltage difference between the first electrode and the third electrode is used to tune the natural frequency of the structure to a scanning frequency of an application. An oscillating voltage difference between the second electrode and the third electrode at the scanning frequency of the application is used to oscillate the mobile element. In one embodiment, the mobile unit is a mirror.
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Advanced Nano Systems, Inc.
Erdem Fazli
Flynn Nathan J.
Hsia David C.
Patent Law Group LLP
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