Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2010-11-02
2011-11-29
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C438S050000, C438S053000, C381S174000
Reexamination Certificate
active
08067811
ABSTRACT:
A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.
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Miyoshi Yuichi
Yamaoka Tohru
Diaz José R
McDermott Will & Emery LLP
Panasonic Corporation
Parker Kenneth
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