MEMS device, MEMS device module and acoustic transducer

Details MEMS device, MEMS device module and acoustic transducer MEMS device, MEMS device module and acoustic transducer

2009-11-20

2010-12-07

Parker, Kenneth A. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S414000, C438S050000, C438S053000, C381S174000

Reexamination Certificate

active

07847359

ABSTRACT:
A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

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Japanese Notice of Reasons for Rejections, with English translation, issued in Japanese Patent Application No. 2009-519738, dated Jul. 7, 2009.

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