Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2004-02-09
2008-08-12
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S254000
Reexamination Certificate
active
07411261
ABSTRACT:
A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.
REFERENCES:
patent: 5367136 (1994-11-01), Buck
patent: 6013573 (2000-01-01), Yagi
patent: 6210988 (2001-04-01), Howe et al.
patent: 6440766 (2002-08-01), Clark
patent: 6511859 (2003-01-01), Jiang et al.
patent: 6531668 (2003-03-01), Ma
patent: 2003/0122205 (2003-07-01), Lee et al.
patent: 2004/0000696 (2004-01-01), Ma et al.
patent: 09-213191 (1997-08-01), None
patent: 2001-347500 (2001-12-01), None
patent: WO 01/01434 (2001-01-01), None
patent: WO 01/56920 (2001-08-01), None
patent: WO 02/16150 (2002-02-01), None
Kim Chung-woo
Kim Jong-seok
Lee Eun-sung
Lee Moon-chul
Song In-sang
Lee & Morse, PC.
Samsung Electronics Co,. Ltd.
Vu Hung
LandOfFree
MEMS device and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MEMS device and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MEMS device and fabrication method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4006344