Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2005-05-17
2005-05-17
Mills, Gregory (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C438S113000
Reexamination Certificate
active
06893574
ABSTRACT:
A MEMS capping method and apparatus uses a cap structure on which is formed a MEMS cavity, a cut capture cavity, and a cap wall. The cap wall is essentially the outer wall of the MEMS cavity and the inner wall of the cut capture cavity. The cap structure is bonded onto a MEMS structure such that the MEMS cavity covers protected MEMS components. The cap structure is trimmed by cutting through to the cut capture cavity from the top of the cap structure without cutting all the way through to the MEMS structure.
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Collins David J.
Farrell Peter W.
Felton Lawrence E.
Luo Jing
Martin John R.
Culbert Roberts
Mills Gregory
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