Memory with memory cells that include a MIM type capacitor...

Details Memory with memory cells that include a MIM type capacitor... Memory with memory cells that include a MIM type capacitor...

2007-05-29

2007-05-29

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

10777704

ABSTRACT:
A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.

REFERENCES:
patent: 6084261 (2000-07-01), Wu
patent: 6380574 (2002-04-01), Torii et al.
patent: 2002/0048870 (2002-04-01), Lane
patent: 2002/0052126 (2002-05-01), Lee et al.
patent: 2003/0124812 (2003-07-01), Ahn et al.
patent: 2002-83940 (2002-03-01), None
patent: 2002-270794 (2002-09-01), None

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