Memory with ferroelectric capacitor connectable to transistor ga

Static information storage and retrieval – Systems using particular element – Ferroelectric

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257295, 257300, G11C 1122

Patent

active

055597335

ABSTRACT:
A ferroelectric memory includes a constant voltage source, a capacitor having first and second electrodes, and a transistor having a gate. A switch alternately connects the gate of the transistor to the first electrode and the constant voltage source. In another embodiment, there are two ferroelectric transistors, and the first electrode of each capacitor is connected both to the gate of the transistor and to a voltage source external of the memory.

REFERENCES:
patent: 2791760 (1957-05-01), Ross
patent: 2791761 (1957-05-01), Morton
patent: 3832700 (1974-08-01), Wu et al.
patent: 4161038 (1979-07-01), Wu
patent: 4888630 (1989-12-01), Paterson
patent: 5038323 (1991-08-01), Schwee
patent: 5198994 (1993-03-01), Natori
patent: 5227855 (1993-07-01), Momose
patent: 5303182 (1994-04-01), Nakao
patent: 5365094 (1994-11-01), Takasu
patent: 5436490 (1995-07-01), Nakamura

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory with ferroelectric capacitor connectable to transistor ga does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory with ferroelectric capacitor connectable to transistor ga, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory with ferroelectric capacitor connectable to transistor ga will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1934349

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.