Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1995-06-07
1996-09-24
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Ferroelectric
257295, 257300, G11C 1122
Patent
active
055597335
ABSTRACT:
A ferroelectric memory includes a constant voltage source, a capacitor having first and second electrodes, and a transistor having a gate. A switch alternately connects the gate of the transistor to the first electrode and the constant voltage source. In another embodiment, there are two ferroelectric transistors, and the first electrode of each capacitor is connected both to the gate of the transistor and to a voltage source external of the memory.
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Gregory John W.
McMillan Larry D.
Mihara Takashi
Paz De Araujo Carlos A.
Yoshimori Hiroyuki
Mai Son
Nelms David C.
Olympus Optical Co,. Ltd.
Symetrix Corporation
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