Memory system including a resistance variable memory device

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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Details

C365S148000, C365S203000, C365S205000, C365S207000

Reexamination Certificate

active

07668007

ABSTRACT:
A memory system includes a resistance variable memory device, and a memory controller for controlling the resistance variable memory device. The resistance variable memory device includes a memory cell connected to a bitline, a high voltage circuit adapted to generate a high voltage from an externally provided power source voltage, where the high voltage is higher than the power source voltage, a precharging circuit adapted to charge the bitline to the power source voltage and further charge the bitline to the high voltage, a bias circuit adapted to provide a read current to the bitline with using the high voltage, and a sense amplifier adapted to detect a voltage level of the bitline with using the high voltage.

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