Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2008-05-21
2010-02-23
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S203000, C365S205000, C365S207000
Reexamination Certificate
active
07668007
ABSTRACT:
A memory system includes a resistance variable memory device, and a memory controller for controlling the resistance variable memory device. The resistance variable memory device includes a memory cell connected to a bitline, a high voltage circuit adapted to generate a high voltage from an externally provided power source voltage, where the high voltage is higher than the power source voltage, a precharging circuit adapted to charge the bitline to the power source voltage and further charge the bitline to the high voltage, a bias circuit adapted to provide a read current to the bitline with using the high voltage, and a sense amplifier adapted to detect a voltage level of the bitline with using the high voltage.
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Cho Beak-Hyung
Cho Woo-Yeong
Choi Byung-Gil
Kim Du-Eung
Oh Hyung-Rok
Lam David
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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