Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2011-07-05
2011-07-05
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S233130, C365S189050, C365S194000
Reexamination Certificate
active
07974143
ABSTRACT:
The memory system, memory device, memory controller and method may have a reduced power consumption. The memory system, memory device, memory controller and method may transition a data strobe signal to a valid logic level during a standby state. The valid logic level may be less than a logic level associated with a higher impedance level, such as when a bus may be turned off or connected to a ground voltage. A delay locked circuit need not be used in the memory device.
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Alrobaie Khamdan
Elms Richard
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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