Memory logic for controlling refresh operations

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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Details

C365S233100

Reexamination Certificate

active

07317648

ABSTRACT:
In a self-refresh mode, alternative refresh commands such as auto-refresh and row active commands are applied to a volatile memory device in response to stored refresh and address information to implement different refresh times for memory cells having different refresh characteristics.

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English language abstract of Korea Publication No. 1998-28895.
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English language abstract of Japanese Publication No. 2001-250378.

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