Memory for producing a memory component

Details Memory for producing a memory component Memory for producing a memory component

2006-03-14

2006-03-14

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S264000, C438S265000, C438S266000, C438S593000, C257S314000, C257S315000, C257S316000

Reexamination Certificate

active

07012003

ABSTRACT:
The invention relates to a method for producing a memory component comprising a memory location (104) having memory cells and first control electrode strips (162) for controlling the individual memory cells, and a peripheral area (106) having peripheral elements and second control electrode strips (164) for controlling said peripheral elements. The inventive method enables the expansion of the second control electrode strips (164) in the peripheral area (106) to be approximately randomly adjusted to minimum line widths, without influencing or changing the expansion of the first control electrode strips (162) in the memory location (104).

REFERENCES:
patent: 5289422 (1994-02-01), Mametani
patent: 5661053 (1997-08-01), Yuan

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