Memory film, method of manufacturing the memory film, memory...

Details Memory film, method of manufacturing the memory film, memory... Memory film, method of manufacturing the memory film, memory...

2006-07-11

2006-07-11

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S962000, C257S317000

Reexamination Certificate

active

07074676

ABSTRACT:
A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.

REFERENCES:
patent: 6090666 (2000-07-01), Ueda et al.
patent: 6165842 (2000-12-01), Shin et al.
patent: 6548825 (2003-04-01), Yoshii et al.
patent: 0 311 773 (1989-04-01), None
patent: WO 99/33120 (1999-07-01), None
English translation of Gautier—WO 99/33120.
Tiwari et al., IEDM. pp. 521-524 (1995).
Hanafi et al., IEEE Transactions on Electron Devices, vol. 43, No. 9, pp. 1553-1558.
Tiwari et al., Appl. Phys. Lett., vol. 68, No. 10, pp. 1377-1379 (1996).

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