Memory devices with selective pre-write verification and...

Details Memory devices with selective pre-write verification and... Memory devices with selective pre-write verification and...

2009-04-07

2010-11-30

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Simultaneous operations

C365S192000, C365S185220, C365S189070, C365S236000, C365S233170

Reexamination Certificate

active

07843741

ABSTRACT:
A number of read cycles applied to a selected memory location of a memory device, such as a variable-resistance memory device, is monitored. Write data to be written to the selected memory location is received. Selective pre-write verifying and writing of the received write data to the selected memory location occurs based on the monitored number of read cycles. Selectively pre-write verifying and writing of the received write data may include, for example, writing received write data to the selected memory cell region without pre-write verification responsive to the monitored number of read cycles being greater than a predetermined number of read cycles.

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