Memory devices with memory cell transistors having gate...

Details Memory devices with memory cell transistors having gate... Memory devices with memory cell transistors having gate...

2007-02-27

2007-02-27

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Mosfet type gate sidewall insulating spacer

C257S314000, C257S315000, C257S316000, C257S321000, C257S322000, C257S323000, C257S327000, C257S336000, C257S344000, C257S408000

Reexamination Certificate

active

10911907

ABSTRACT:
A memory device, such as a DRAM, SRAM or non-volatile memory device, includes a substrate, a gate electrode disposed on the substrate, and source and drain regions in the substrate adjacent respective first and second sidewalls of the gate electrode. First and second sidewall spacers are disposed on respective ones of the first and second sidewalls of the gate electrode. The first and second sidewall spacers have different dielectric constants. The first and second sidewall spacers may be substantially symmetrical and/or have substantially the same thickness.

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Notice to Submit a Response for Korean Patent Application No. 10-2003-0058507 mailed on Nov. 11, 2005.

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