Memory devices including multi-bit memory cells having...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S100000, C365S148000, C365S171000, C977S935000, C977S754000

Reexamination Certificate

active

07952914

ABSTRACT:
An integrated circuit memory device may include an integrated circuit substrate, and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memory cell may be configured to store a first bit of data by changing a first characteristic of the multi-bit memory cell and to store a second bit of data by changing a second characteristic of the multi-bit memory cell. Moreover, the first and second characteristics may be different. Related methods are also discussed.

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Korean Notice to File a Response/Amendment to the Examination Report and English translation corresponding to Korean Patent Application No. 10-2007-0009475; Mailing Date Jul. 14, 2008.

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